Modulation doping of Silicon to surpass semiconductor miniaturisation barriers
Impact Focus areas
Research area
Our cutting-edge modulation doping technology enhances semiconductor-dielectric structures by introducing dopants into the dielectric material. This innovative approach provides free electrons to the semiconductor through quantum tunnelling, significantly improving electronic and opto-electronic device performance. Ideal for ultra-low power VLSI and cryo-electronics, this technology overcomes the limitations of traditional impurity doping, paving the way for advanced miniaturization and efficiency.
Potential benefits
- Enhanced charge carrier mobility
- Reduced power consumption
- Lower thermal losses
- Improved device miniaturization
- Increased operational stability
Potential applications
- Ultra-low power VLSI circuits
- Quantum computing peripherals
- High-efficiency solar cells
- Advanced opto-electronic devices
- Next-generation semiconductor devices
Opportunity
We are seeking research and industry partners to develop the technology further, and to license the technology for commercial applications.
IP status
The IP is owned by The Australian National University and the subject of a provisional patent (Application no. AU2024900489)
Key research team
Dr Dirk Koenig (https://researchportalplus.anu.edu.au/en/persons/dirk-koenig)
Prof Sean Smith (https://researchportalplus.anu.edu.au/en/persons/sean-smith)
Contacts
